Characteristics of Photoelectrochemical Cells Based on n/n-Si and p/n-Si Photoanodes Modified by Metal Films
نویسندگان
چکیده
Photoelectrochemical cells (PECs), composed of different epitaxial n-Si photoanodes coated with evaporated metal film of Ni, Pt, Ni/Pt and immersed in solution with redox couple Br2 /Br or Fe(NC)g~7Fe(CN)£~ were investigated. The open circuit photovoltage and short circuit current density of these PECs under optimum conditions by illuminating with a bromine-tungsten lamp (65 mW/cm), are 0.494 V and 45.8 mA/cm, respectively. By using a p/n junction for the epitaxial silicon and the Schottky barrier effect formed at the silicon-metal interface, a much higher conversion efficiency of optical to electrical energy up to 12.3% could be achieved.
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تاریخ انتشار 2012